for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 50 linear & power amplifiers - smt hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505 general description features functional diagram the hmc413qs16g & hmc413qs16ge are high efficiency gaas ingap heterojunction bipolar tran- sistor (hbt) mmic power amplifi ers which operate between 1.6 and 2.2 ghz. the amplifi er is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved rf and thermal perfor- mance. with a minimum of external components, the amplifi er provides 23 db of gain, +29.5 dbm of satu- rated power at 42% pae from a +5v supply voltage. the amplifi er can also operate with a 3.6v supply. vpd can be used for full power down or rf output power/ current control. gain: 23 db saturated power: +29.5 dbm 42% pae supply voltage: +2.75v to +5v power down capability low external part count included in the hmc-dk002 designers kit electrical specifi cations, t a = +25 c, as a function of vs, vpd = 3.6v typical applications this amplifi er is ideal for use as a power/driver amplifi er for 1.6 - 2.2 ghz applications: ? cellular / pcs / 3g ? portable & infrastructure ? wireless local loop parameter frequency vs= 3.6v vs= 5v units min. typ. max. min. typ. max. gain 1.6 - 1.7 ghz 1.7 - 2.0 ghz 2.0 - 2.1 ghz 2.1 - 2.2 ghz 18 19 18 17 21 22 21 20 19 20 19 18 22 23 22 21 db db db db gain variation over temperature 1.6 - 2.2 ghz 0.025 0.035 0.025 0.035 db/c input return loss 1.6 - 2.2 ghz 10 10 db output return loss 1.6 - 2.2 ghz 8 9 db output power for 1 db compression (p1db) 1.6 - 1.7 ghz 1.7 - 2.2 ghz 20 21 23 24 23 24 26 27 dbm dbm saturated output power (psat) 1.6 - 1.7 ghz 1.7 - 2.2 ghz 25.5 26.5 28.5 29.5 dbm dbm output third order intercept (ip3) 1.6 - 1.7 ghz 1.7 - 2.0 ghz 2.0 - 2.2 ghz 32 33 32 35 36 35 36 37 36 39 40 39 dbm dbm dbm noise figure 1.6 - 2.2 ghz 5.5 5.5 db supply current (icq) vpd= 0v/3.6v 0.002/220 0.002/270 ma control current (ipd) vpd= 3.6v 7 7 ma switching speed ton, toff 80 80 ns
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 51 return loss, vs= 3.6v return loss, vs= 5v gain vs. temperature, vs= 3.6v gain vs. temperature, vs= 5v p1db vs. temperature, vs= 3.6v p1db vs. temperature, vs= 5v 0 5 10 15 20 25 30 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 1.3 1.5 1.7 1.9 2.1 2.3 2.5 s11 s22 return loss (db) frequency (ghz) -20 -16 -12 -8 -4 0 1.3 1.5 1.7 1.9 2.1 2.3 2.5 s11 s22 return loss (db) frequency (ghz) 0 4 8 12 16 20 24 28 32 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 32 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 5 10 15 20 25 30 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c gain (db) frequency (ghz) hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 52 linear & power amplifiers - smt power compression@ 1.9 ghz, vs= 3.6v power compression@ 1.9 ghz, vs= 5v psat vs. temperature, vs= 3.6v psat vs. temperature, vs= 5v output ip3 vs. temperature, vs= 3.6v output ip3 vs. temperature, vs= 5v 2 6 10 14 18 22 26 30 34 38 42 46 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 2 6 10 14 18 22 26 30 34 38 42 46 -12-10-8-6-4-20246810 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 12 16 20 24 28 32 36 40 44 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 10 14 18 22 26 30 34 38 42 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 32 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c psat (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 32 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c psat (dbm) frequency (ghz) hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 53 noise figure vs. temperature, vs= 3.6v noise figure vs. temperature, vs= 5v reverse isolation vs. temperature, vs= 3.6v gain & power vs. supply voltage @ 1.9 ghz power down isolation, vs= 3.6v gain, power & quiescent supply current vs. vpd @ 1.9 ghz, vcc = +3.6v 0 2 4 6 8 10 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c noise figure (db) frequency (ghz) 0 2 4 6 8 10 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c noise figure (db) frequency (ghz) 13 16 19 22 25 28 30 90 150 210 270 330 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 gain p1db psat icq gain (db), p1db (dbm), psat (dbm) icq (ma) vpd (vdc) 20 21 22 23 24 25 26 27 28 29 30 14 16 18 20 22 24 26 28 30 32 34 2.75 3.25 3.75 4.25 4.75 5.25 gain p1db psat gain (db) p1db, psat (dbm) vcc supply voltage (vdc) -60 -50 -40 -30 -20 -10 0 1.3 1.5 1.7 1.9 2.1 2.3 2.5 isolation (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 1.3 1.5 1.7 1.9 2.1 2.3 2.5 +25 c +85 c -40 c isolation (db) frequency (ghz) hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 54 linear & power amplifiers - smt outline drawing absolute maximum ratings collector bias voltage (vcc) +5.5 vdc control voltage (vpd1, vpd2) +4.0 vdc rf input power (rfin)(vs = +5vdc, vpd = +3.6 vdc) +15 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 24 mw/c above 85 c) 1.56 w thermal resistance (junction to ground paddle) 42 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505 part number package body material lead finish msl rating package marking [3] hmc413qs16g low stress injection molded plastic sn/pb solder msl1 [1] hmc413 xxxx hmc413qs16ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] hmc413 xxxx [1] max peak refl ow temperature of 235 c [2] max peak refl ow temperature of 260 c [3] 4-digit lot number xxxx package information notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 55 pin number function description interface schematic 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 3, 14 vpd1, vpd2 power control pin. for maximum power, this pin should be connected to 3.6v. for 5v operation, a dropping resistor is required. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 6 rfin this pin is ac coupled and matched to 50 ohms from 1.6 to 2.2 ghz. 11, 12 rfout rf output and bias for the output stage. 16 vcc power supply voltage for the fi rst amplifi er stage. an external bypass capacitor of 330 pf is required as shown in the application schematic. pin descriptions hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 56 linear & power amplifiers - smt evaluation pcb the circuit board used in the fi nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 105000 [1] * for 5v operation on vctl line, select r1, r2 such that 3.6v is presented on pins 3 and 14. item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 2.2 pf capacitor, 0603 pkg. c2 10 pf capacitor, 0402 pkg. c3 - c4 330 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum l1 16 nh inductor 0603 pkg. u1 hmc413qs16g / hmc413qs16ge amplifi er pcb [2] 105018 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 57 application circuit * for 5v operation on vctl line, select r1, r2 such that 3.6v is presented on pins 3 and 14. tl1 tl2 tl3 impedance 50 ohm 50 ohm 50 ohm length 0.1 0.15 0.1 hmc413qs16g / 413qs16ge gaas ingap hbt mmic power amplifier, 1.6 - 2.2 ghz v04.0505
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